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| Customization: | Available |
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| Certification: | RoHS, CE, ISO, CCC |
| Encapsulation Structure: | Plastic Sealed Transistor |
| Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
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Features
Ultra low collector-to-emitter saturation voltage
High DC current gain
Small package DFNWB2*2-6L
Applications
Charging circuit
Other power management in portable equipment
| V(BR)DSS | RDS(ON)MAX | ID |
20V |
600mΩ @4.5V | 0.8A |
| 650mΩ @ 2.5V | ||
| 700mΩ @ 1.8V | ||
| -32V | / | -1.5A |
Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .
| Parameter | Symbol | Limit | Unit |
| PNP Transistor | |||
| Collector-Base Voltage | VCBO | -32 | V |
| Collector-Emitter Voltage | VCEO | -25 | V |
| Emitter-Base Voltage | VEBO | -6 | V |
| Collector Current-Continuous(Note1) | IC | -1.5 | A |
| Collector Current-Continuous(Note2) | -0.6 | A | |
| Collector Current-Pulse(Note3) | ICM | -4 | A |
| N-MOSFET | |||
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±5 | V |
| Drain Current-Continuous(Note1) | ID | 0.8 | A |
| Drain Current-Continuous(Note2) | 0.69 | ||
| Drain Current-Pulse(Note3) | IDM | 1.4 | A |
| Power Dissipation,Temperature and Thermal Resistance | |||
| Power Dissipation | PD | 0.7 | W |
| Power Dissipation(Tc=25ºC , Note1) | Pc | 2.5 | W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 178.6 | ºC/W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 To150 | ºC |
| Lead Temperature for Soldering Purposes(1/8'' from case for 10s) | TL | 260 | ºC |
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