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| Customization: | Available |
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| Encapsulation Structure: | Plastic Sealed Transistor |
| Application: | Electronic Products |
| Shipping Cost: | Contact the supplier about freight and estimated delivery time. |
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| Parameter | Symbol | Value | Unit | |
Reverse Voltage |
VR |
20 30 40 |
V |
|
| Average Forward Rectified Current | IF(AV) | 1 | A | |
| Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) | IFSM | 9 | A | |
| Power Dissipation | Ptot | 450 | mW | |
| Operating Temperature Range | Tj | - 55 to + 125 | OC | |
| Storage Temperature Range | Tstg | - 55 to + 125 | OC | |
| Parameter | Symbol | Min. | Max. | Unit | |
| Reverse Breakdown Voltage at IR = 1 mA |
VC1N5817WSB VC1N5818WSB VC1N5819WSB |
V(BR)R |
20 30 40 |
- - - |
V |
| Forward Voltage at IF = 1 A at IF = 3 A |
VC1N5817WSB VC1N5818WSB VC1N5819WSB VC1N5817WSB VC1N5818WSB VC1N5819WSB |
VF |
- - - - - - |
0.45 0.55 0.6 0.75 0.875 0.9 |
V |
| Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V |
VC1N5817WSB VC1N5818WSB VC1N5819WSB |
IR |
- - - |
1 1 1 |
mA |
| Total Capacitance at VR = 4 V, f = 1 MHz |
Ctot | - | 120 | pF | |

