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Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

Product Specifications Select Now
PACKAGE
SOD-323
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Product Details
Customization: Available
Encapsulation Structure: Plastic Sealed Transistor
Application: Electronic Products
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  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
  • Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
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  • Overview
  • Product Description
  • Detailed Photos
  • Company Profile
Overview

Basic Info.

Model NO.
VC1N5819WSB
Certification
RoHS, CE, ISO, CCC
Luminous Intensity
Non-Light-Emitting Semiconductor Diode
Color
Black
Structure
Schottky Barrier Structure
Material
Silicon
Application1
Power Management
Application2
Consumer Electronics
Application3
Circuit Protection
Application4
Freewheeling & Rectification
Pin1
Cathode
Pin2
Anode
Package Outline
Plastic Surface Mounted Package:2 Leads
Transport Package
Secure Packaging
Specification
A Surface Mount Schottky Barrier Diode
Trademark
Weforsemi
Origin
China
HS Code
8541100000
Production Capacity
1000000PCS/Month

Packaging & Delivery

Package Size
24.00cm * 22.00cm * 6.00cm
Package Gross Weight
1.000kg
Lead Time
15 days (1 - 1000000 Pieces)
To be negotiated ( > 1000000 Pieces)

Product Description

Factory Supply VC1N5819WSB SOD-323 Surface Mount Schottky Diode With Exclusive Patent
Product Description
PIN DESCRIPTION
PIN1:Cathode
PIN2:Anode


Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
Absolute Maximum Ratings (Ta  = 25 ºC)
Parameter Symbol Value Unit

Reverse Voltage
 
VR
20
30
40

V
Average Forward Rectified Current IF(AV) 1 A
Non-Repetitive Peak Forward Surge Current (t = 8.3 ms) IFSM 9 A
Power Dissipation Ptot 450 mW
Operating Temperature Range Tj - 55 to + 125 OC
Storage Temperature Range Tstg - 55 to + 125 OC

 Characteristics at T  = 25ºC
 
Parameter Symbol Min. Max. Unit
Reverse Breakdown Voltage
at IR = 1 mA
VC1N5817WSB
VC1N5818WSB
VC1N5819WSB

V(BR)R
20
30
40

-
-
-

V
Forward Voltage
at IF = 1 A


at IF = 3 A
VC1N5817WSB
VC1N5818WSB
VC1N5819WSB
VC1N5817WSB
VC1N5818WSB
VC1N5819WSB



VF

-
-
-

-
-
-
0.45
0.55
0.6
0.75
0.875
0.9



V
Reverse Voltage Leakage Current
at VR = 20 V
at VR = 30 V
at VR = 40 V
VC1N5817WSB
VC1N5818WSB
VC1N5819WSB

IR

-
-
-
1
1
1

mA
Total Capacitance
at VR = 4 V, f = 1 MHz
Ctot - 120 pF
 
Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and  specifications before final design, purchase or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi  assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi  products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .

 
Detailed Photos

 

Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive PatentWholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

 

 

Company Profile

Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

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